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We propose hybrid classical-quantum approaches to study the electron transport in strongly confined nanostructures. The device domain is made of an active zone (where quantum effects are strong) sandwiched between two electron reservoirs (where the transport is considered highly collisional). So, a one dimensional effective mass Schr\"odinger system (used to describe the active zone) is spatially coupled with macroscopic collisional models (either a drift-diffusion model or a quantum drift-diffusion model). All the considered models contain effective quantities which retain the effects of the strong confinement and the atomistic information of the two dimensional transversal crystal structure. Self-consistent computations are performed coupling the hybrid transport equations with the resolution of a Poisson equation in the whole three dimensional domain. To illustrate these hybrid strategies, we present simulations of a gate-all-around single-walled Carbon Nanotube Field-Effect Transistor. |
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