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| We consider spin-orbit interaction of the Rashba type due to interfacial electric fields in asymmetric semiconductor heterostructures. In spin transistors, the Rashba interaction is localized in a one-dimensional channel, giving rise to a spin precession of injected electrons from attached ferromagnetic leads. Interestingly, we find strongly modulated transmission lineshapes when the leads are normal metals. The effect is due to asymmetric scattering with Rashba induced quasi-bound states in the localized region, as shown in our numerical calculations based on the quantum transmitting boundary algorithm. Furthermore, we discuss the role of external magnetic fields, multimode effects in quantum wires and thermoelectric properties of spin-orbit graphene monolayers. |
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