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| With the current scenario of different candidates to lead the road to 14 nm node and beyond in the semiconductor industry, advanced device simulation represents an essential tool for the development of upcoming technological nodes in two ways: predicting the performance of different architectures and technological choices; and reducing the development stage in terms of cost and time. The Multi-Subband Ensemble Monte Carlo (MS-EMC) method is one of the best approximations to obtain a detailed description of both electrostatic and quantum phenomena in such small devices with an affordable computational cost. The possibility of studying the impact of each technological booster separately to explain experimental results becomes of paramount interest specially, nowadays, when it is difficult to isolate them in order to determine which one is the most effective in improving device performance. In this way, MSB-EMC simulations can offer shorter development times and easier implementation of new electrical compact models needed for the design and simulation of future circuits. |
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